Design and implementation of an S-band transmitter for nanosatellites with new configuration

In this paper, the author presents design and implementation of an Sband transmitter for nanosatellites. By combining heterostructure field effect transistors (HFET) laterally diffused metal–oxide–semiconductor (LDMOS) technology using flexible structure control method, research obtained 60 dB gain power when input is -14 dBm, output 46 dBm (more than 25 W) in 2,1 GHz -2,3 Ghz frequency; phase noise -80 dBc/Hz at 100 KHz offset frequency. Unlike other traditional transmitters, was designed with multi-stages which have multi-peaks resonance to expand bandwidth respond requirement generation complex signal wide band. Moreover, locked loop (PLL) frequency synthesizer makes conversion more stable; thermal problem module also solved by thermistor operation mode. Measurement results prove that does not only satisfy requirements nanosatellites but can be applied satellites together their ground station because it has open configure method.